AT12015-21

AT12015-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12015-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE: • High Tuning Ratio, ∆CT = 8.5 MIN. • High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O NONE CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 120 1.0 100 f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz 12 8.5 300 0.9 UNITS V V nA pF ----Ω 14 16 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1