AT6019M

AT6019M SILICON ABRUPT JUNCTION TUNING VARACTOR DESCRIPTION: The AT6019M is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship Closley Approximates Square Law (n = 0.5). PACKAGE STYLE 15 MAXIMUM RATINGS IC VCE PDISS TJ TSTG O O 100 mA 70 V 250 mW @ TC = 25 C -65 C to +150 C -65 C to +150 C O O O NONE CHARACTERISTICS SYMBOL VB CT ∆ CT ∆ CT Q TC IR = 10 µA VR = 4.0 V TC = 25 C O TEST CONDITIONS f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz f = 50 MHz MINIMUM 70 31.35 7.4 2.50 800 TYPICAL 33.0 MAXIMUM 34.65 2.60 300 UNITS V pF RATIO RATIO Ppm/ C O CT= 0 V / CT = 60 V CT = 8.0 V / CT = 60 V VR = 4.0 V VR = 4.0 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1