AVD002F

AVD002F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD002F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .250 2L FLG(B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System DIM E F G H K I J MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 250 mA 37 V 10 W @ TC ≤ 100 °C -65 °C to +200 °C -65 °C to +150 °C 10 °C/W A B C D E F G H I J K .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 ORDER CODE: ASI10552 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 1 mA IC = 5 mA IE = 1 mA VCE = 35 V VCE = 5.0 V VCC = 35 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 UNITS V V V mA --dB % IC = 100 mA POUT = 2 W f = 1025 - 1150 MHz 30 9.0 35 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1