AVD002P_07

AVD002P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD002P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .280 4L PILL (A) A .1 0 0 x 4 5 ° FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System C B ØG D MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 250 mA 37 V 10 W @ TC ≤ 100 °C -65 °C to +200 °C -65 °C to +150 °C 10 °C/W D IM A B C D E F G .2 7 5 / 6 .99 M IN IM U M in c h e s / m m E F M A X IM U M in c h e s / m m .0 9 5 / 2 .41 .1 9 5 / 4 .95 1 .0 0 0 / 2 5 .4 0 .0 0 4 / 0 .10 .0 5 0 / 1 .27 .1 0 5 / 2 .67 .2 0 5 / 5 .21 .0 0 7 / 0 .18 .0 6 5 / 1 .65 .1 4 5 / 3 .68 .2 8 5 / 7 .21 ORDER CODE: ASI10553 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCC = 35 V IC = 100 A POUT = 2.0 W f = 1025 – 1150 MHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 30 9.0 35 300 UNITS V V V mA --dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1