AVD015F

AVD015F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD015F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .250 2L FLG (B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System E F G H J K I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 1.25 A PEAK 50 V 50 W PEAK DIM A B C D E F G H I J M INIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 -65 °C to +200 °C -65 °C to +150 °C 2.0 °C/W .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 K ORDER CODE: ASI10556 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 50 V VCE = 5.0 V VCC = 50 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 2.5 UNITS V V V mA --dB % IC = 500 mA POUT = 15 W f = 1025 – 1150 MHz 15 10.0 35 120 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1