AVD075F_07

AVD075F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD075F is designed for applications requiring Class C, High Peak Power and low duty cycle such as IFF, DME and TACAN PACKAGE STYLE .250 2L FLG (B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 7.5 dB at 75 W/1150 MHz • Omnigold™ Metalization System H E F G I J K DIM A M INIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 5.5 A PEAK 65 V 220 W PEAK B C D E F G H I J K .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 -65 °C to +200 °C -65 °C to +150 °C 0.8 °C/W ORDER CODE: ASI10560 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 5.0 UNITS V V V mA --dB % IC = 500 mA f = 1025 - 1150 MHz 11 7.5 35 200 POUT = 75 W VCC = 50 V PIN = 13.5 W NOTE: Pulse Width = 10 µS Duty Cycle = 1 % REV. C A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/1