AVD090F_07

AVD090F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD090F is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. PACKAGE STYLE .250 2L FLG (B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System E F G H J K I MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 1.0 A PEAK 55 V 292 W @ 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W DIM A B C D E F G H I J K M INIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 ORDER CODE: ASI10562 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE COB PG ηC IC = 10 mA IC = 25 mA IE = 1.0 mA VCB = 50 V VCE = 5.0 V VCE = 50 V VCC = 50 V PIN = 13 W TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 100 UNITS V V V mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 90 W f = 1025 - 1150 MHz 10 200 40 8.4 38 Pulse with = 10 µS, Duty Cycle = 1.0 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 AVD090F ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA PIN = 13 w VCE = 50 V FREQ ZIN (Ω) 960 MHz 2.5 + j13.0 1030 MHz 5.2 + j15.0 1090 MHz 16.3 + j15.0 1150 MHz 14.7 + j2.5 1215 MHz 7.6 + j0.5 ZCL (Ω) 4.6 – j5.5 5.0 – j5.5 4.8 – j5.5 4.7 – 7.0 4.7 – j5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2