AVF150

AVF150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz. PACKAGE STYLE .250 2L FLG (B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • Internal Input/Output Matching Networks • PG = 8.2 dB at 150 W/1150 MHz • Omnigold™ Metalization System • 30:1 load VSWR capability F G H E I J K DIM A B M INIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 11 A 55 V 400 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 0.6 °C/W C D E F G H I J K .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 ORDER CODE: ASI10570 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE PG ηC IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 50 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 3.5 10.5 UNITS V V V mA --dB % IC = 300 mA POUT = 150 W f = 1025 - 1150 MHz 5.0 8.5 40 120 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1