AVF600
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AVF600 is a high power pulsed transistor, designed for JFF avionics applications. It is designed for operation under short pulse width & low cycle and capable of withstanding 25:1 load mismatch.
PACKAGE STYLE .400 2L FLG (A)
4x .062 x 45° 2 xB A .040 x 45° C F
E D G H J K
2xR
I L
FEATURES:
• Internal Input/Output Matching Networks • PG = 5.6 dB at 600W/1090 MHz • Omnigold™ Metalization System • CB operation • 25:1 VSWR capability
M DIM A B C D E F G H .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 I J K L M N P M IN IM UM
inches / m m
N
P
M A XIM UM
inches / m m
.135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90
.145 / 3.68 .120 / 3.05 .396 / 10.06 .130 / 3.30 .407 / 10.34 .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θJC 43 A 55 V 1670 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 0.09 °C/W
ORDER CODE: ASI10576
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE PG ηC IC = 25 mA IC = 50 mA IE = 5.0 mA VCE = 50 V VCE = 5.0 V
TC = 25 °C
NONETEST CONDITIONS
RBE = 10 Ω
MINIMUM TYPICAL MAXIMUM
65 65 3.5 60
UNITS
V V V mA --dB %
IC = 2.0 A POUT = 600 W f = 1030 - 1090 MHz
10 6.0 35
250
VCC = 50 V PIN = 150 W
Pulse width = 10 µsec, Duty Cycle = 1.0 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
AVF600 ERROR! REFERENCE SOURCE NOT FOUND.
IMPEDANCE DATA
FREQ 1025 MHz 1090 MHz 1150 MHz PIN = 150 W VCC = 50 V ZIN(Ω) 3.7 + j4.5 4.3 + j1.6 2.8 + j1.6 ZCL(Ω) 0.9 – j1.6 1.0 – j2.3 0.8 – j2.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2
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