BFT51F

BFT51F NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI BFT51 is Designed for High Frequency Amplifier Applications. PACKAGE STYLE TO- 126 MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 500 mA 20 V 3.0 W @ TC = 25 °C -65 °C to +175 °C -65 °C to +175 °C 20 K/W NONE CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO ICES HFE ft Ccb CC IC = 10 mA IC = 10 mA TC = 25 °C TEST CONDITIONS RBE = 100 Ω MINIMUM 10 19 20 3.0 TYPICAL MAXIMUM UNITS V V V V IC = 5.0 mA IC = 1.0 mA VCE = 10 V VCE = 5.0 V VCE = 5.0 V VCB = 5.0 V VCB = 5.0 V IC = 100 mA IC = 300 mA IC = 300 mA f = 100 MHz f = 1.0 MHz f = 1.0 MHz 100 40 50 1.0 2.0 4.2 5.8 µA --GHz Pf Pf A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1