BLF245

BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system PACKAGE STYLE .380 4L FLG MAXIMUM RATINGS ID VDS VGS PDISS TJ TSTG θJC 6.0 A 65 V ±20 V 68 W @ TC = 25 °C -65 °C to +150 °C -65 °C to +200 °C 1.8 °C/W 1 = DRAIN 2 = GATE 3&4 = SOURCE CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD ψ ID = 10 mA VDS = 28 V VDS = 0 V VDS = 10 V VDS = 10 V VDS = 28 V VDS = 28 V NONE TC = 25 °C TEST CONDITIONS VGS = 0 V VGS = ±20 V ID = 10 mA ID = 1.5 A VGS = 0 V IDQ = 25 mA f = 1.0 MHz Pout = 30 W f = 150 MHz MINIMUM 65 TYPICAL MAXIMUM 2.0 1.0 UNITS V mA µA V S pF dB % 2.0 1.2 1.9 125 75 7.0 13 50 16 60 4.5 VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1