BLF245C

BLF245C RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .400 8L FLG C D B A F U LL R FEATURES INCLUDE: • PG = 16 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system G F E .1925 .125 K H O 4 x .060 R I J N LM MAXIMUM RATINGS ID VDS VGS PDISS TJ TSTG θJC 6.0 A 65 V ±20 V 68 W @ TC = 25 °C -65 °C to +150 °C -65 °C to +200 °C 1.8 °C/W D IM A B C D E F G H I J K L M N O M IN IM U M inches / m m M A X IM U M inches / m m .030 / 0.76 .115 / 2.92 .360 / 9.14 .065 / 1.65 .130 / 3.30 .380 / 9.65 .735 / 18.67 .645 / 16.38 .895 / 22.73 .420 / 10.67 .003 / 0.08 .120 / 3.05 .159 / 4.04 .395 / 10.03 .390 / 9.91 .765 / 19.43 .655 / 16.64 .905 / 22.99 .430 / 10.92 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10.29 .075 / 1.91 .125 / 3.18 COMMON SOURCE CHARACTERISTICS SYMBOL BVDSS IDSS IGSS VGS(th) gfs Ciss Coss Crss PG ηD ψ ID = 10 mA VDS = 28 V VDS = 0 V VDS = 10 V VDS = 10 V VDS = 28 V VDS = 28 V NONE TC = 25 °C TEST CONDITIONS VGS = 0 V VGS = ±20 V ID = 10 mA ID = 1.5 A VGS = 0 V IDQ = 25 mA f = 1.0 MHz Pout = 30 W f = 150 MHz MINIMUM 65 TYPICAL MAXIMUM 2.0 1.0 UNITS V mA µA V S pF dB % 2.0 1.2 1.9 125 75 7.0 13 50 16 60 4.5 VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1