BLV20

BLV20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 12 dB at 8.0 W/175 MHz • Omnigold™ Metalization System PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J .125 B E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 65 V 35 V DIM MINIMUM inches / mm I GH MAXIMUM inches / mm 65 V 4.0 V 20 W @ TC = 25 ° C -65 °C to +200 °C -65 °C to +150°C 8.75 °C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE CC PG ηC TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 2.0 mA IC = 10 mA IE = 1.0 mA VCB = 36 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 8.0 W IC = 400 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 10 10 12 60 100 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1