BLV30_06

BLV30 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV30 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: • Common Emitter • PG = 10 dB at 2.0 W/860 MHz • Omnigold™ Metalization System B C E B D C J E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 1.5 A 60 V 30 V 4.0 V 15.9 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 10 OC/W O DIM A B C D E F G H I J K E F G H K MINIMUM inches / mm I #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG IMD1 IC = 10 mA IC = 50 mA IE = 4.0 mA VCB = 30 V VCE = 25 V VCB = 28 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 30 4.0 4.0 UNITS V V V mA --pF dB dBc IC = 500 mA f = 1.0 MHz IC = 410 mA f = 860 MHz 15 120 10 VCE = 25 V POUT = 2.0 W 10 -60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1