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BLV57

BLV57

  • 厂商:

    ASI

  • 封装:

  • 描述:

    BLV57 - NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
BLV57 数据手册
BLV57 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV57 is Designed for use as push-pull amplifier, primarily in linear UHF TV transmitting Applications. PACKAGE STYLE .400 8L FLG C D B A F U LL R G FEATURES: • Input Matching Network • Common emitter • Omnigold™ Metalization System with eutectic die bonding F E .19 25 .125 K H O 4 x .0 60 R I J N LM MAXIMUM RATINGS IC VCESM VCE PDISS TJ TSTG θJC 2.0 A 50 V 27 V 77 W @ TC = 25 C -65 °C to +200 °C -65 °C to +150 °C 2.27 °C/W D IM A B C D E F G H I J K L M N O M IN IM UM inche s / m m M A X IM U M inche s / m m .030 / 0.76 .115 / 2.92 .360 / 9.14 .065 / 1.65 .130 / 3.30 .380 / 9.65 .735 / 18 .6 7 .645 / 16 .3 8 .895 / 22 .7 3 .420 / 10 .6 7 .003 / 0.08 .120 / 3.05 .159 / 4.04 .395 / 10 .0 3 .390 / 9.91 .765 / 19 .4 3 .655 / 16 .6 4 .905 / 22 .9 9 .430 / 10 .9 2 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10 .2 9 .075 / 1.91 .125 / 3.18 ORDER CODE: ASI10646 O CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE fT PG IMD1 IC = 25 mA IC = 10 mA IE = 5.0 mA VE = 27 V VCE = 25 V VCB = 25 V VCB = 25 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 27 50 3.5 10 UNITS V V V mA --- IC = 850 mA IE = 1.7 A IE = 850 mA IC = 850 mA f = 860 MHz 15 2.5 2.5 8.0 -60 GHz dB dBc VCE = 25 V POUT = 6.0 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1
BLV57 价格&库存

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