BLV57
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV57 is Designed for use as push-pull amplifier, primarily in linear UHF TV transmitting Applications.
PACKAGE STYLE .400 8L FLG
C D B A F U LL R G
FEATURES:
• Input Matching Network • Common emitter • Omnigold™ Metalization System with eutectic die bonding
F E .19 25 .125 K H
O
4 x .0 60 R I J N LM
MAXIMUM RATINGS
IC VCESM VCE PDISS TJ TSTG θJC 2.0 A 50 V 27 V 77 W @ TC = 25 C -65 °C to +200 °C -65 °C to +150 °C 2.27 °C/W
D IM A B C D E F G H I J K L M N O
M IN IM UM
inche s / m m
M A X IM U M
inche s / m m
.030 / 0.76 .115 / 2.92 .360 / 9.14 .065 / 1.65 .130 / 3.30 .380 / 9.65 .735 / 18 .6 7 .645 / 16 .3 8 .895 / 22 .7 3 .420 / 10 .6 7 .003 / 0.08 .120 / 3.05 .159 / 4.04 .395 / 10 .0 3 .390 / 9.91 .765 / 19 .4 3 .655 / 16 .6 4 .905 / 22 .9 9 .430 / 10 .9 2 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10 .2 9 .075 / 1.91 .125 / 3.18
ORDER CODE: ASI10646
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CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES hFE fT PG IMD1 IC = 25 mA IC = 10 mA IE = 5.0 mA VE = 27 V VCE = 25 V VCB = 25 V VCB = 25 V
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
27 50 3.5 10
UNITS
V V V mA ---
IC = 850 mA IE = 1.7 A IE = 850 mA IC = 850 mA f = 860 MHz
15 2.5 2.5 8.0 -60
GHz dB dBc
VCE = 25 V POUT = 6.0 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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