BLV859

BLV859 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG(C) .080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M FEATURES: • Common Emitter • PG = 10 dB at 150 W/860 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCEO VCBO VEBO PDISS TJ TSTG θJC 15 A 28 V 60 V 2.5 V 145 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.20 °C/W DIM A B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1 .090 / 27.69 M IN IMUM inches / m m J K MAXIMUM inches / m m .220 / 5.59 .210 / 5.33 .230 / 5.84 .130 / 3.30 .390 / 9.91 .820 / 20.83 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21 .407 / 10.34 .870 / 22.10 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO ICEO hFE COB PG IMD1 VSRW IC = 30 mA IC = 60 mA IE = 1.2 mA VCB = 27 V VCE = 20 V VCE = 25 V VCB = 26 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 28 2.5 3.0 6.0 UNITS V V V mA mA --pF dB dBc IC = 2.25 A f = 1.0 MHz ICQ = 2 X 2.25 A f = 860 MHz POUT = 20 W PEP 30 75 10 140 VCC = 25 V POUT = 20 W -54 No Degradation in Output Power VCC = 25 V ICQ = 2 X 2.25 A VSWR = 50:1 @ all phase angles A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1