BLV859
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz.
PACKAGE STYLE .400 BAL FLG(C)
.080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M
FEATURES:
• Common Emitter • PG = 10 dB at 150 W/860 MHz • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCEO VCBO VEBO PDISS TJ TSTG θJC 15 A 28 V 60 V 2.5 V 145 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.20 °C/W
DIM A B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1 .090 / 27.69 M IN IMUM
inches / m m
J
K
MAXIMUM
inches / m m
.220 / 5.59 .210 / 5.33
.230 / 5.84 .130 / 3.30 .390 / 9.91 .820 / 20.83
1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21 .407 / 10.34 .870 / 22.10
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO ICEO hFE COB PG IMD1 VSRW IC = 30 mA IC = 60 mA IE = 1.2 mA VCB = 27 V VCE = 20 V VCE = 25 V VCB = 26 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
60 28 2.5 3.0 6.0
UNITS
V V V mA mA --pF dB dBc
IC = 2.25 A f = 1.0 MHz ICQ = 2 X 2.25 A f = 860 MHz POUT = 20 W PEP
30 75 10
140
VCC = 25 V POUT = 20 W
-54 No Degradation in Output Power
VCC = 25 V ICQ = 2 X 2.25 A VSWR = 50:1 @ all phase angles
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
很抱歉,暂时无法提供与“BLV859”相匹配的价格&库存,您可以联系我们找货
免费人工找货