BLV99

BLV99 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • High Gain PACKAGE STYLE 205 4L STUD MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 300 mA 45 V 25 V 3.5 V 5.3 W @ TC = 25 °C -65 °C to +200 °C -65 °Cto +150 °C 33 °C/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE COB PG IMD1 IC = 1.0mA IC = 10 mA TC = 25 °C TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 1.0 UNITS V V V mA --- IE = 1.0 mA VEB = 5.0 V VCE = 5 V VCB = 24 V VCE = 20 V VCE = 20 V Pout = 0.5 W IC = 150 mA IC = 150 mA IC = 100 mA f = 1.0 MHz f = 860 MHz f = 860 MHz 20 3.5 12 -58 pF dB dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1