BLW31_07

BLW31 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW31 is an NPN silicon power transistor, designed 175 MHz applications, especially suited for design of wide-band and semi-wide-band VHF amplifiers. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • Common Emitter-Class-A, B or C • PG = 9 dB at 28 W/175 MHz • Omnigold™ Metalization System B C E ØC E B H I J MAXIMUM RATINGS IC VCESM VCEO VEBO PDISS TJ TSTG θJC 6.0 A 36 V 18 V 4.0 V 96 W @ TMB = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.85 °C/W DIM A B C D E F G H I J D #8-32 UNC-2A F E G M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE CCC CRE CCS PG ηC IC = 25 mA IE = 10 mA VCE = 18 V TC = 25 °C NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 18 36 4.0 10 UNITS V V V mA --- VCE = 5.0 V IC = 3.5 A 10 92 80 VCB = 13.5 V f = 1.0 MHz 58 2 pF VCC = 13.5 V POUT = 28 W f = 175 MHz 9.0 60 9.5 70 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1