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BLW34

BLW34

  • 厂商:

    ASI

  • 封装:

  • 描述:

    BLW34 - NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
BLW34 数据手册
BLW34 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: A The ASI BLW34 is Designed for use in UHF amplifiers up to 860 MHz. B 45° C E B D C J E F G I E FEATURES: • PG = 10.2 dB Typical at 860 MHz • Omnigold™ Metallization System MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 3.5 A 50 V 31 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 5.6 °C/W D IM A B C D E F G H I J K .1 7 5 / 4 .4 5 .2 7 5 / 6 .9 9 .2 4 5 / 6 .2 2 M IN IM U M in c h e s / m m H K # 8 -3 2 U N C M A X IM U M in c h e s / m m 1 .0 1 0 / 2 5 .6 5 .2 2 0 / 5 .5 9 .2 7 0 / 6 .8 6 .0 0 3 / 0 .0 8 .1 1 7 / 2 .9 7 .5 7 2 / 1 4 . 5 3 .1 3 0 / 3 .3 0 1 .0 5 5 / 2 6 .8 0 .2 3 0 /5 .8 4 .2 8 5 / 7 .2 4 .0 0 7 / 0 .1 8 .1 3 7 / 3 .4 8 .2 5 5 / 6 .4 8 .6 4 0 / 1 6 . 2 6 .2 1 7 / 5 .5 1 .2 8 5 / 7 .2 4 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE Cc Cre Ccs TC = 25 °C TEST CONDITIONS IC = 60 mA IC = 8.0 mA IE = 4.0 mA VCE = 30 V VCE = 25 V IC = 600 mA VBE = 0 V MINIMUM TYPICAL MAXIMUM 30 50 4 2 20 40 13.5 UNITS V V V mA --pF VCB = 25 V f = 1.0 MHz 8.4 1.2 GP VCE = 25 V POUT 2.15 W IC = 600 mA f = 224 MHz 10.2 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV 0 1/1
BLW34 价格&库存

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