BLW60C

BLW60C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW60C is Designed for 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • Common Emitter • PG = 5.0 dB at 45 W/175 MHz • Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCESM VCEO VEBO PDISS TJ TSTG θJC 9.0 A 36 V 16 V 4.0 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G M INIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE CC GP ηC IC = 50 mA TC = 25 °C NONETEST CONDITIONS IC = 100 mA IE = 25 mA VCE = 15 V VCE = 5.0 V VCB = 15 V VCC = 12.5 V POUT = 45 W IC = 4.0 A f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 36 16 4.0 25 10 80 160 5.0 75 UNITS V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. 1/1