BLW96
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R L
FEATURES:
• PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W (PEP) • Omnigold™ Metalization System
C B
E
C
Ø.125 NOM.
B
E H D G F
E
MAXIMUM RATINGS
IC VEES VCEO VEBO PDISS TJ TSTG θJC
O O
IJ
K
12 A
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
110 V 55 V 4.0 V 320 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.7 C/W
O O O O
A B C D E F G H I J K L
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81
.230 / 5.84
.255 / 6.48 .7.30 / 18.54
.980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11
.980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10826
O
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICES hFE VCE CC GP IMD3 ηC IC = 50 mA
TC = 25 C
NONETEST CONDITIONS
IC = 200 mA IE = 20 mA VCE = 55 V VCE = 5.0 V IC = 20 A VCB = 50 V IC = 7.0 A IC = 4.0 A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
110 55 4.0 10 15 50 1.9 280 13.5 -30
UNITS
V V V mA --V pF dB dBc %
VCE = 50 V
ICQ =100 mA
POUT = 200 W (PEP) 40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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