BLW96

BLW96 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW96 is Designed for High Linearity Class A, AB HF Power Amplifier Applications up to 30 MHz. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 14 dB Typical at 200 W/28 MHz • IMD3 = -32 dBc Typ. at 220 W (PEP) • Omnigold™ Metalization System C B E C Ø.125 NOM. B E H D G F E MAXIMUM RATINGS IC VEES VCEO VEBO PDISS TJ TSTG θJC O O IJ K 12 A DIM MINIMUM inches / mm MAXIMUM inches / mm 110 V 55 V 4.0 V 320 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.7 C/W O O O O A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 ORDER CODE: ASI10826 O CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE VCE CC GP IMD3 ηC IC = 50 mA TC = 25 C NONETEST CONDITIONS IC = 200 mA IE = 20 mA VCE = 55 V VCE = 5.0 V IC = 20 A VCB = 50 V IC = 7.0 A IC = 4.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 110 55 4.0 10 15 50 1.9 280 13.5 -30 UNITS V V V mA --V pF dB dBc % VCE = 50 V ICQ =100 mA POUT = 200 W (PEP) 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1