BM30-12

BM30-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM30-12 is Designed for VHF land mobil applications in the 150175 MHZ range. PACKAGE STYLE .500 6L FLG C A FEATURES: • Common Emitter • POUT = 30 W at175 MHz • Omnigold™ Metalization System • Internal Matching network D C E E B B G .725/18,42 F K H D IM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 D E F G H I J K L M N M IN IM U M inches / m m 2x Ø N FU LL R E MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG θJC 8.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 2.7 °C/W M L J I M AXIM U M inches / m m .150 / 3.43 .045 / 1.14 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO Cob POUT PIN ηC ZIN ZL IC = 20 mA IC = 50 mA IE = 5.0 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 18 4.0 UNITS V V VCB = 12.5 V VCC = 12.5 V POUT = 40 W f = 1.0 MHz f = 175 MHz 30 110 pF W 4.5 60 1.0 + j1.4 1.75 + j0.5 W % Ω Ω POUT = 30 W f = 175 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1