CBSL100_07

CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E D C .1925 F H I N L G M FEATURES: • Internal Input/Output Matching Network • PG = 9.0 dB at 100 W/ 960 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 25 A 60 V 30 V 3.0 V 310 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W DIM A B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1 .090 / 27.69 M IN IMUM inches / m m J K MAXIMUM inches / m m .220 / 5.59 .210 / 5.33 .230 / 5.84 .130 / 3.30 .390 / 9.91 .820 / 20.83 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21 .407 / 10.34 .870 / 22.10 ORDER CODE: ASI10585 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE PG IMD ηC TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 50 mA VCE = 28 V VCE = 5.0 V VCE = 24 V POUT = 100 W IC = 3.0 A ICQ = 2 X 100 mA f = 960 MHz MINIMUM TYPICAL MAXIMUM 60 30 3.0 10 15 9.0 -32 45 70 UNITS V V V mA --dB dBc % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1