CBSL60B

CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .450 BAL FLG (A) .060x45° B A C D F FULL R .100x45° FEATURES: • Internal Input/Output Matching Networks • PG = 8.5 dB at 60 W/960 MHz • Omnigold™ Metalization System E P G H K J M L DIM A MINIMUM inches / mm N MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 8.0 A 60 V 28 V 3.5 V 146 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.2 °C/W .055 / 1.40 .120 / 3.05 .455 / 11.56 .120 / 3.05 .230 / 5.84 .838 / 21.28 1.095 / 27.81 .525 / 13.34 .002 / 0.05 .055 / 1.40 .080 . 2.03 .445 / 11.30 MAXIMUM inches / mm B C D E F G H J K L M N P .130 / 3.30 .785 / 19.94 .465 / 11.81 .130 / 3.30 .850 / 21.59 1.105 / 28.07 .535 / 13.59 .005 / 0.15 .065 / 1.65 .095 / 2.41 .195 / 4.95 .455 / 11.56 ORDER CODE: ASI10584 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO hFE PG VSRW TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 20 mA VCE = 25 V VCE = 5.0 V VCC = 26 V POUT = 60 W VCC = 26 V IC =3.0 A ICQ = 2 X 200 mA f = 960 MHz f = 960 MHz MINIMUM TYPICAL MAXIMUM 60 28 3.5 30 25 8.5 5:1 80 UNITS V V V mA --dB --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1