HF10-12S

HF10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF10-12S is Designed for broadband operation in commercial and amateur communication equipment up to 30 MHz. PACKAGE STYLE .380 4L STUD .112x45° A C B FEATURES: • PG = 15 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System E ØC E B H I J D #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.5 A DIM M INIMUM inches / mm MAXIMUM inches / mm 36 V 18 V 4.0 V 40 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 4.4 °C/W A B C D E F G H I J .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10593 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE Cob GP IMD3 IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 20 mA f = 30 MHz 10 100 15 200 VCB = 12.5 V VCC = 12.5V POUT = 10 W (PEP) -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1