HF100-12

HF100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-12 is a 12.5 V ClassC epitaxial planar transistor designed primarily for HF communications. This device utilizes state of the art diffused Emitter Ballasting to achieve extreme ruggedness under severe operating conditions. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L E C Ø.125 NOM. C B B E D G F K FEATURES: • PG = 13 Typ. min. at 100 W/30 MHz • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System DIM A B C E H IJ MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20 A 36 V 18 V 4.0 V 290 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W D E F G H I J K L ORDER CODE: ASI10599 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.0 V VCB = 12.5 V IC = 5.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 20 10 400 200 UNITS V V V V mA --pF REV. B A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/2 HF100-12 ERROR! REFERENCE SOURCE NOT FOUND. GP IMD3 VCE = 12.5 V VCE = 12.5 V ICQ = 150 mA ICQ = 150 mA f = 30 MHz POUT = 100 W 11 13 -30 dB dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2