HF100-28

HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG .112x45° A L FEATURES: • PG = 15 dB min. at 100 W/30 MHz • High linear power output • IMD3 = -30 dBc max. at 100 W (PEP) • Omnigold™ Metalization System • 28 V CE operation E FULL R C Ø.125 NOM. C B B D G F E E H IJ K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20 A 65 V 36 V 4.0 V 270 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.65 °C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10608 CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICES hFE Cob GP IMD3 TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 5.0 V VCB = 30 V VCE = 28 V PIN = 3.16 W IC = 5.0 A f = 1.0 MHz PPUT = 100 W f2 = 30.001 MHz MINIMUM TYPICAL MAXIMUM 35 65 65 4.0 15 10 --15 16 -34 -30 200 285 UNITS V V V mA --pF dB dBc f1 = 30.000 MHz ICQ = 100 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 1/2 HF100-28 ERROR! REFERENCE SOURCE NOT FOUND. TEST CIRCUIT SAFE OPERATING AREA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 2/2