HF150-50F_07

HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold™ Metalization System • Common Emitter configuration C B E C Ø.125 NOM. B D G F E E H IJ K MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG θJC 10 A 110 V 55 V 4.0 V 233 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.75 °C/W A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 ORDER CODE: ASI10612 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICEO ICES hFE Cob GP IMD3 ηC TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VCE = 60 V VCE = 6 V VCB = 50 V IC = 1.4 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 110 110 55 4.0 5 5 18 43.5 220 14 UNITS V V V V mA mA --pF dB dBc % REV. B VCE = 50 V ICQ =100 mA f1 = 30.000 MHz POUT = 150 W (PEP) f2 = 30.001 MHz -30 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/1