HF150-50S

HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD (A) .112 x 45° A Ø .630 NOM C E E D FEATURES: • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold™ Metalization System • Common Emitter configuration BC B E G 1/4-28 UNF-2A F H MAXIMUM RATINGS IC VCBO VEBO VCEO PDISS TJ TSTG θJC 10 A 110 V 4.0 V 55 V 233 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.75 °C/W DIM A B C D E F G H .185 / 4.70 .497 / 12.62 .545 / 13.84 .495 / 12.57 .003 / 0.08 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.050 / 26.67 .555 / 14.10 .505 / 12.83 .007 / 0.18 .830 / 21.08 .198 / 5.03 .530 / 13.46 ORDER CODE: ASI10613 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICEO ICES hFE Cob GP IMD3 ηC TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 30 V VE = 60 V VCE = 6 V VCB = 50 V IC = 1.4 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 110 110 55 4.0 5 5 18 43.5 220 14 UNITS V V V V mA mA --pF dB dBc % REV. C VCE = 50 V ICQ =100 mA POUT = 150 W (PEP) f2 = 30.001 MHz 37 -30 f1 = 30.000 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/1