HF220-28_07

HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is 28 V epitaxial planar transistor, designed for SSB and VHF communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .500 4L FLG .112x45° A L FEATURES: • PG = 12 dB min. at 220 W/30 MHz • IMD3 = -30 dBc max. at 220 W (PEP) • Omnigold™ Metalization System • 30 MHz @ 28 V operations • IMD –30 dBc FULL R E C Ø.125 NOM. C B B E H D G F E K IJ MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 16 A 70 V 35 V 4.0 V 320 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10609 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICEO ICES hFE COB TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 100 mA IE = 20 mA VCE = 30 V VCE = 35 V VCE = 5.0 V VCB = 28 V IC = 7.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 35 70 4.0 5.0 5.0 15 --450 60 --- UNITS V V V mA mA --pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. HF220-28 CHARACTERISTICS GP IMD3 ηC Load Mismatch VCE = 28 V TC = 25 °C ICQ = 750 mA POUT = 220 W 12 --40 -30 dB dBc % F1 = 30.000MHz VCE = 28 V f2 = 30.001 MHz ICQ = 750 mA POUT = 220 W --- ∞:1 --- VSWR IMPEDANCE DATA FREQ ZIN (Ω) 30 MHz 1.15 + J0.41 ZCL (Ω) 1.25 + J1.92 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2