HF250-50_07

HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE 0.550 4L FLG FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W(PEP) • Omnigold™ Metalization System E C B E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 40 A 110 V 55 V 4.0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.40 °C/W ORDER CODE: ASI10615 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICEO ICES hFE Cob GP IMD3 ηC TC = 25° C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 60 V VCE = 6.0 V VCB = 50 V IC = 10 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 55 110 4.0 10 10 15 45 360 14.5 UNITS V V V mA mA --pF dB dBc % VCE = 50 V ICQ = 150 mA POUT = 250 W(PEP) 37 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 1/2 HF250-50 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 2/2