HF30-28S

HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD .112x45° A C B FEATURES: • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System E ØC E B I J D H #8-32 UNC-2A F G MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ TSTG θJC 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.9 °C/W DIM A B C D E F G H I J M INIMUM inches / mm E MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10605 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES ICBO hFE COB IC = 10 mA TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 ----5.0 ----------10 100 200 65 UNITS V V V V mA mA --pF A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 HF30-28F ERROR! REFERENCE SOURCE NOT FOUND. GP ηC IMD3 VCE = 28 V POUT = 30 W (PEP) PIN = 0.48 W f = 30 MHz 718 60 -28 dB % dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2