HF50-12F_1

HF50-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12F is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely suitable and capable of withstanding high VSRW under operating conditions. PACKAGE STYLE .380 4L FLG B .112 x 45° A E C Ø.125 NOM. FULL R J .125 B E C D FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W (PEP) • Omnigold™ Metalization System F E I GH MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 12.0 A 45 V 18 V 3.5 V 183 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.05 °C/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10596 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50 mA TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V IC = 5.0 A MINIMUM TYPICAL MAXIMUM 45 40 18 3.5 10 10 --- UNITS V V V V mA --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without REV. C 1/2 HF50-12F ERROR! REFERENCE SOURCE NOT FOUND. COB GP ηC VCB = 12.5 V VCE = 12.5 V POUT = 50 W (PEP) PIN = 5.0 W f = 1.0 MHz f = 30 MHz 10 55 300 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without REV. C 2/2