HF75-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF75-50S is 50 V Class AB NPN Power transistor, designed for SSB & VHF Communacations.
PACKAGE STYLE .380” 4L STUD
.112x45° A
FEATURES INCLUDE:
• Direct Replacement for TH513 • High Gain, 16 dB Typical @ 30 MHz • W ithstands Server Mismatch • Omnigold™ Metalization System • 75 W POUT • 50 V OPERATIONS
B
C E
ØC
E B
I J
D
H
#8-32 UNC-2A F E
G
MAXIMUM RATINGS
IC VCB VCE VEB PDISS TJ TSTG θJC
O O
3.25 A 110 V 55 V 4.0 V 127 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.0 C/W
O O O O
DIM A B C D E F G H I J
M INIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO hFE Cob GPE ηC IMD3
TC = 25 C
O
TEST CONDITIONS
IC = 100 mA IC = 200 mA IE = 10 mA VCE = 6.0 V VCB = 50 V IC = 1.4 A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
110 55 4.0 19 14 37 -30 50 100
UNITS
V V V --pF dB % dBc
VCC = 50 V PIN = 3.0 W POUT = 75 W PEP f1 = 30.000 MHz, f2 = 30.001 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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