HF8-28S_07

HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° A B FEATURES: • PG = 21 dB min. at 8 W/30 MHz • IMD3 = -30 dBc max. at 8 W (PEP) • Omnigold™ Metalization System E ØC C E B H I J D MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 13.5 °C/W DIM A B C D E F G H I J M INIMUM inches / mm #8-32 UNC-2A F E G MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10736 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICBO hFE COB GP TC = 25 °C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V VCC = 28 V PIN = 1.0 W IC = 200 mA f = 1.0 MHz f = 150 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 1.0 5.0 --15 10 UNITS V V V V mA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1