HFT150-50

HFT150-50 HF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The HFT150-50 is Designed for General Purpose Class B Power Amplifier Applications Up to 100 MHz. PACKAGE STYLE .500 4L FLG .112x45° A L FEATURES: • PG = 20 dB Typ. at 150 W/30 MHz • η D = 50% Typical at 150 W/30 MHz • Omnigold™ Metalization FULL R S D Ø.125 NOM. C B G E H D G F S IJ K MAXIMUM RATINGS ID VDSS VGS PDISS TJ T STG θ JC O O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm 16 A 125 V ± 30 V 300 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.6 OC/W O O .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10617 NONE CHARACTERISTICS SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs Ciss Coss Crss Gps ηD ψ ID = 50 mA VDSS = 50 V VGS = 20 V VDS = 10 V VDS = 10 V TC = 25 OC TEST CONDITIONS VGS = 0 V VGS = 0 V VDS = 0 V ID = 100 mA ID = 5.0 A MINIMUM TYPICAL MAXIMUM 125 5.0 1.0 5.0 UNITS V mA µA V S 1.0 3.5 300 150 30 16 45 20 50 VDS = 50 V VGS = 0 V f = 1.0 MHz pF dB % VDD = 50 V IDQ = 250 mA POUT = 150W (PEP) FO = 30 & 30.001 MHz VSWR 30:1 @ all phase angles NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1