LT3014

LT3014 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain PACKAGE STYLE .280 4L STUD MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 300 mA 45 V 5.0 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 33.0 OC/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CEO BV CES BV EBO hFE PG P1dB IP3 Cob ft IC = 10 mA VBE = 0 V IE = 1.0 mA VCE = 5.0 V VCE = 20 V VCE = 20 V VCE = 20 V VCB = 28 V VCE = 20 V TC = 25 OC NONE TEST CONDITIONS IC = 10 mA MINIMUM TYPICAL MAXIMUM 22 50 3.5 UNITS V V V IC = 100 mA ICQ = 150 mA ICQ = 150 mA f = 1.0 GHz f = 1.0 GHz 20 3.0 27 3.5 29 48 2.0 3.0 3.5 200 --GHz dBm dBm ICQ = 150 mA f = 1.0 GHz POUT = 10 dBm (2 EQUAL TONES) f = 1.0 MHz ICQ = 150 mA f = 1.0 GHz 3.0 pF GHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1