MLN1027SS

MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SS is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Class A Operation • PG = 11 dB at 0.5 W/1.0 GHz • Omnigold™ Metalization System B G A C E F H #8-32U N C MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 1.0 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 °C/W DIM A B C D E F G H I J .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100 M INIM UM inches / m m J M AX IM UM inches / m m .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800 .196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200 ORDER CODE: ASI10621 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob PG IC = 50 mA IC = 50 mA IE = 10 mA VCE = 28 V VCE = 5.0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5.0 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 100 mA f = 1.0 GHz 10 100 3.5 VCE = 20 V POUT = 0.5 W 11 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1