MLN1027S_07

MLN1027S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027S is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A 45° FEATURES: • Class A Operation • PG = 9.0 dB at 0.5 W/1.0 GHz • Omnigold™ Metalization System B C E B D C J E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 0.250 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 °C/W DIM A B C D E F G H I J K E F G H K MINIMUM inches / mm I #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10619 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG TC = 25 °C NONETEST CONDITIONS IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 24 V VCE = 5.0 V VCB = 28 V VCE = 20 V POUT = 0.5 W ICQ = 100 mA IC = 100 mA f = 1.0 MHz f = 1.0 GHz MINIMUM TYPICAL MAXIMUM 40 28 3.5 0.5 20 120 3.5 9.0 UNITS V V V mA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1