MRA0510-50H

MRA0510-50H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA0510-50H is Designed for Class AB Linear Amplifier Applications up to 1000 MHz. PACKAGE STYLE .400 4L FLG. E FEATURES: B C • Omnigold™ Metalization System • Diffused Ballast Resistors. • Internal Matching Network B C MAXIMUM RATINGS VCEO VCBO VEBO PDISS TJ TSTG θJC 30 V 60 V 4.0 V 125 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 1.4 OC/W E FLANGE CHARACTERISTICS SYMBOL BVCES BVCBO BVEBO ICBO hFE Cob GPB VSRW IC = 25 mA IC = 25 mA IE = 5.0 mA VCB = 30 V TC = 25 °C NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 60 60 4.0 25 V V V mA --pF dB --80 24 7.0 5:1 VCE = 5.0 V VCB = 28 V VCE = 28 V IC = 1.0 A f = 1.0 MHz Pout = 50 W f = 1.0 GHz 20 ICQ = 2 X 120 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1