MRA0610-23

MRA0610-23 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .320 2L FLG DESCRIPTION: The MRA0610-23 is designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. MAXIMUM RATINGS IC VCES TJ TSTG θJC 3.5 A (CONT) 50 V -65 °C to +200 °C -65 °C to +150 °C 3.0 °C/W 1= COLLECTOR 2= BASE 3= EMITTER CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB ηc TC = 25 C O NONE TEST CONDITIONS IC = 150 mA IE = 2.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V Pout = 23 W IC = 750 mA f = 1.0 MHz f = 600 MHz & 1.0 GHz MINIMUM TYPICAL MAXIMUM UNITS 50 3.5 3.0 10 100 21 7.0 50 V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1