MRA1417-2

MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching PACKAGE STYLE 250 2L FLG (C) MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC 0.5 A 50 V 12 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 15 °C/W TC = 25 °C 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob PG ηC IC = 20 mA TEST CONDITIONS IE = 0.25 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 2.0 W IC = 100 mA f = 1.0 MHz f = 1700 MHz MINIMUM TYPICAL MAXIMUM 50 3.5 0.5 10 100 4.5 8.0 45 UNITS V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1