MRAL1720-9_07

MRAL1720-9 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. PACKAGE STYLE 250 2L FLG C FEATURES: • Diffused Ballast Resistors. • Internal Matching Network • Omnigold™ Metalization System B E B MAXIMUM RATINGS IC VCES VEBO TJ TSTG θJC 4.0 A (CONT) 42 V 3.5 V -65 °C to +200 °C -65 °C to +150 °C 4.5 °C/W CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob GPB ηc IC = 80 mA IE = 1.0 mA VCB = 22 V TC = 25 °C NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 42 3.5 2.0 V V mA --pF dB % 100 12 6.5 40 VCE = 5.0 V VCB = 28 V VCE = 22 V IC = 400 mA f = 1.0 MHz Pout = 9.0 W f = 1.7 GHz & 2.0 GHz 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1