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MRAL2023-18

MRAL2023-18

  • 厂商:

    ASI

  • 封装:

  • 描述:

    MRAL2023-18 - NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
MRAL2023-18 数据手册
MRAL2023-18 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRAL2023-18 is a Common Base Device Designed for Class C Amplifier Applications in LBand FM Microwave Links. PACKAGE STYLE .250 2L FLG (C) FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Input/Output Matching MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 4.0 A 42 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W A B C D E F G H I J K L MINIMUM Inches/mm .095/2.41 0125/3.18 .380/9.65 .780/19.81 .392/9.96 .645/16.38 .895/22.73 .002/0.05 .055/1.40 .105/2.67 .392/.408 MAXIMUM Inches/mm .105/2.67 .390/9.91 .408/10.36 .655/16.64 .905/22.99 .006/0.15 .065/1.65 .130/3.30 .230/5.84 .408/10.36 CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE PG ηC TC = 25 °C TEST CONDITIONS IC = 160 mA IE = 2.0 mA VCB = 22 V VCE = 5.0 V VCE = 22 V IC = 800 mA f = 2000 - 2300 MHz POUT = 18.0 W MINIMUM TYPICAL MAXIMUM 42 3.5 4.0 10 7.0 35 100 UNITS V V mA --dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1
MRAL2023-18 价格&库存

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