MRAL2023-3

MRAL2023-3 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRAL2023-3 is a Common Base Device Designed for class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE .250 2L FLG (C) FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC O O 0.5 A 40 V 10 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 16 C/W O O O O 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE COB PG ηC IC = 20 mA TC = 25 C O TEST CONDITIONS IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V VCE = 22 V POUT = 3.0 W IC = 200 mA f = 1.0 MHz f = 2000 to 2300 MHz MINIMUM TYPICAL MAXIMUM 40 3.5 1.0 10 5 8.0 8.5 45 UNITS V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1