MRF1000MB

MRF1000MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1000MB is Designed for Class A, DME/TACAN Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: • Class A Operation • PG = 10 dB at 0.2 W/1090 MHz • Omnigold™ Metalization System ØB E C B E ØC MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O D E F 200 mA 20 V DIM MINIMUM inches / mm MAXIMUM inches / mm 7.0 W -65 C to +200 C -65 C to +150 C 25.0 C/W O O O A B C D E F .220 / 5.59 .230 / 5.84 1.055 / 26.80 .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE PG TC = 25 C O NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 28 V VCE = 5.0 V VCC = 18 V IC = 100 mA POUT = 0.2 W f = 1090 MHz MINIMUM TYPICAL MAXIMUM 50 20 3.5 1.0 15 10 120 UNITS V V V mA --dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1