MRF1002MB

MRF1002MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .280 4L PILL (A) A .1 0 0 x 4 5 ° 1 C B FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System 3 4 ØG 2 D F MAXIMUM RATINGS IC VCEO VCBO PDISS TJ TSTG θJC 250 mA 20 V 50 V 7.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 25 °C/W D IM A B C D E F G .2 7 5 / 6 .9 9 M IN IM U M in c h e s / m m E M A X IM U M in c h e s / m m .0 9 5 / 2 .4 1 .1 9 5 / 4 .9 5 1 .0 0 0 / 2 5 .4 0 .0 0 4 / 0 .1 0 .0 5 0 / 1 .2 7 .1 0 5 / 2 .6 7 .2 0 5 / 5 .2 1 .0 0 7 / 0 .1 8 .0 6 5 / 1 .6 5 .1 4 5 / 3 .6 8 .2 8 5 / 7 .2 1 1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE CHARACTERISTICS SYMBOL BVCEO BVCBO BVCES BVEBO ICBO hFE COB PG ηC TC = 25 °C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 35 V VCE = 5.0 V VCB = 35 V VCC = 35 V POUT = 2.0 W IC = 100 A f = 1.0 MHz f = 1090 MHz MINIMUM TYPICAL MAXIMUM 20 50 50 3.5 0.5 10 2.5 10 40 12 35 100 5.0 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1