MRF10350

MRF10350 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. PACKAGE STYLE .400 2NL FLG A .0 2 5 x 4 5 ° 2X B C F ØD E 4 x .0 6 2 x 4 5 ° C FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz • Omnigold™ Metalization System H B L G I J K B P E M N MAXIMUM RATINGS IC VCBO VCES PDISS TJ TSTG θJC 31 A 65 V 65 V 1590 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 0.11 °C/W D IM A B C D E F G H I J K L M N P M IN IM U M inches / m m M A X IM U M inches / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 . 4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0 .0 3 0 / 0 .7 6 .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4 .6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 .4 1 5 / 1 0 .5 4 .0 0 7 / 0 .1 8 .0 7 2 / 1 .8 3 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICBO hFE PG ηC IC = 60 mA IC = 60 mA IE = 10 mA VCE = 36 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 3.5 25 UNITS V V V mA --- VCE = 5.0 V VCC = 50 V IC = 5.0 A POUT = 350 W f = 1090 MHz 20 8.5 40 9.0 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1