MRF1035MB

MRF1035MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL (A) A C .100x45° FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz • Omnigold™ Metalization System C B B B ØG E MAXIMUM RATINGS IC VCBO VCES PDISS TJ TSTG θJC 2.0 A 60 V DIM D E F M INIMUM inches / mm MAXIMUM inches / mm 60 V 35 W PEAK A B C D .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 .105 / 2.67 .205 / 5.21 .007 / 0.18 .065 / 1.65 .145 / 3.68 -65 °C to +200 °C -65 °C to +150 °C 5.0 °C/W E F G .275 / 6.99 .285 / 7.21 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICBO hFE Cob PG ηC IC = 20 mA IC = 20 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 60 4.0 2.0 UNITS V V V mA --pF dB % IE = 2.0 mA VCE = 50 V VCE = 5.0 V VCB = 50 V VCC = 50 V POUT = 35 W IC = 500 mA f = 1.0 MHz f = 1090 MHz 10 10 10 30 12.4 34 100 15 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1