MRF1090MB

MRF1090MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. PACKAGE STYLE .280 4L PILL (A) A .100x45° FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System C B ØG D MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 1.0 A PEAK 55 V 292 W @ 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.6 °C/W DIM A B C D E F G .275 / 6.99 M INIMUM inches / mm inches / mm E F MAXIMUM .105 / 2.67 .205 / 5.21 .095 / 2.41 .195 / 4.95 1.000 / 25.40 .004 / 0.10 .050 / 1.27 .007 / 0.18 .065 / 1.65 .145 / 3.68 .285 / 7.21 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE COB PG ηC IC = 10 mA IC = 25 mA IE = 1.0 mA VCB = 50 V VCE = 5.0 V VCE = 50 V VCC = 50 V PIN = 13 W TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 100 UNITS V V V mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 90 W f = 1025 - 1150 MHz 10 200 40 8.4 38 Pulse with = 10 µS, Duty Cycle = 1.0 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1